Low-loss silicon nitride photonic ICs for near-infrared wavelength bandwidth.

Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220×550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.

Optical hydrogen sensing with high-Q guided-mode resonance of Al2O3/WO3/Pd nanostructure.

Nanostructure based on a dielectric grating (Al2O3), gasochromic oxide (WO3) and catalyst (Pd) is proposed as a hydrogen sensor working at the room temperature. In the fabricated structure, the Pd catalyst film was as thin as 1 nm that allowed a significant decrease in the optical absorption. A high-Q guided-mode resonance was observed in a transmission spectrum at normal incidence and was utilized for hydrogen detection. The spectra were measured at 0-0.12% of hydrogen in a synthetic air (≈ 80% [Formula: see text] and 20% [Formula: see text]). The detection limit below 100 ppm of hydrogen was demonstrated. Hydrogen was detected in the presence of oxygen, which provides the sensor recovery but suppresses the sensor response. Sensor response was treated by the principal component analysis (PCA), which effectively performs noise averaging. Influence of temperature and humidity was measured and processed by PCA, and elimination of the humidity and temperature effects was performed. Square root dependence of the sensor response on the hydrogen concentration (Sievert's law) was observed. Sensor calibration curve was built, and the sensor resolution of 40 ppm was found. Long term stability of the sensor was investigated. Particularly, it was shown that the sensor retains its functionality after 6 months and dozens of acts of response to gas.

ITO film stack engineering for low-loss silicon optical modulators.

The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (Nc = 3.7·1020 cm-3) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 1020 cm-3). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current-voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.

Optical properties of tungsten trioxide, palladium and platinum thin films for functional nanostructures engineering: erratum.

In our recent paper [D. P. Kulikova Opt. Express28(21), 32049 (2020).10.1364/OE.405403], an early version of Fig. 1 was published. This erratum corrects that error.

Optical properties of tungsten trioxide, palladium, and platinum thin films for functional nanostructures engineering.

In recent years, we have been witnessing the intensive development of optical gas sensors. Thin palladium and platinum films as well as tungsten trioxide films with palladium or platinum catalysts are widely used for hydrogen detection, and the optical constants of these materials are required for sensor development. We report the optical parameters retrieved from a set of ellipsometric and transmission spectra for electron-beam evaporated palladium, platinum, and tungsten trioxide films. The tungsten trioxide films were 81 nm, 162 nm, and 515 nm thick and the metal films were as thin as 5-7 nm. Ultrathin palladium and platinum films were shown to be successfully described by local and isotropic permittivity, which is quite different from known bulk values. However, this permittivity showed a strong dependence on adjacent materials, thus illustrating that the ultrathin metallic films can be considered composites characterized by effective permittivity. With the obtained refractive indices and permittivities, the optical spectra of fabricated WO3/Pd and WO3/Pt nanostructures incorporating 1D grating of Al2O3 were in an excellent agreement with the calculated ones without requiring any additional fitting procedures or inclusion of surface roughness layers in numerical models.